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High Performance 0.5 and 0.25 μm Gate GaAs Mesfet Grown by MOCVD Using Tertiarybutylarsine
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- Journal:
- MRS Online Proceedings Library Archive / Volume 204 / 1990
- Published online by Cambridge University Press:
- 25 February 2011, 123
- Print publication:
- 1990
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- Article
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